Long-range migration of intrinsic defects during irradiation or implantation

Journal of Physics Condensed Matter

Volumn 21, Issue 36, 2009, Pages

  Steeds, J W ^a   Sullivan, W ^a   Wotherspoon, A ^a   Hayes, J M ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC DISPLACEMENT; DEFECT CENTRES; DOSE RATE; ELECTRON ENERGIES; ELECTRONS AND HOLES; HELIUM IMPLANTATION; IMPLANTATION PROCESS; IMPLANTED REGION; INTERSTITIAL ATOMS; INTERSTITIALS; INTRINSIC DEFECTS; IRRADIATED SAMPLES; LOW TEMPERATURES; PHOTOLUMINESCENCE MICROSCOPY; RANGE MIGRATION;

DEFECTS; ELECTRIC FIELDS; HELIUM; HYDROGEN; IRRADIATION; POINT DEFECTS; SILICON CARBIDE; SINGLE CRYSTALS; VACANCIES;

ELECTRONS;

EID: 70349580767     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/36/364219     Document Type: Article

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