Identification of neutral carbon vacancy-carbon anti-site complex by low temperature photoluminescence spectroscopy

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 437-440

  Steeds, J W ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

Anti site defects; Deep levels; Photoluminescence; Vacancy complexes

Indexed keywords

ELECTRON IRRADIATION; PHOTOLUMINESCENCE SPECTROSCOPY; SILICON CARBIDE; TEMPERATURE;

ANTI-SITE DEFECT; CARBON VACANCY; DEEP-LEVELS; LOW TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPIES; PHOTOLUMINESCENCE SPECTRUM; VACANCY COMPLEXES;

PHOTOLUMINESCENCE;

EID: 63849290155     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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