Anti-site defects are found at large distances from localised H and He ion implantations

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 409-412

  Steeds, J W ^a   Peng, N ^b   Sullivan, W ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

4H SiC; Defects; Helium and proton implantation; Photoluminescence

Indexed keywords

DEFECTS; HELIUM; IONS; PHOTOLUMINESCENCE; SILICON CARBIDE;

4H SIC; ANTI-SITE DEFECT; HE ION IMPLANTATION; ION PROBE; LOCALISED; PROTON IMPLANTATION;

ION IMPLANTATION;

EID: 70349574548     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.409     Document Type: Conference Paper

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