Reduction of dislocations in a (1 1 2̄ 2)GaN grown by selective MOVPE on (1 1 3)Si

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2879-2882

  Tanikawa, T ^a   Kagohashi, Y ^a   Honda, Y ^a   Yamaguchi, M ^a   Sawaki, N ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides; B1. Semiconducting III V materials

Indexed keywords

A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES; B1. SEMICONDUCTING III-V MATERIALS; DARK SPOTS; EPITAXIAL LATERAL OVERGROWTH; GAN TEMPLATE; MOVPE; ORDERS OF MAGNITUDE; SELECTIVE EPITAXY; SI SUBSTRATES;

DEFECT DENSITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SILICON; SULFUR COMPOUNDS; VAPORS;

GALLIUM ALLOYS;

EID: 65749117014     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.109     Document Type: Article

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