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Volumn 255, Issue 24, 2009, Pages 9770-9774
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Fabrication of microchannels in single-crystal GaN by wet-chemical-assisted femtosecond-laser ablation
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Author keywords
Ablation; Femtosecond laser; Gallium nitride; Microchannel
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Indexed keywords
ABLATION;
CHLORINE COMPOUNDS;
DEBRIS;
ENERGY GAP;
FABRICATION;
FEMTOSECOND LASERS;
GALLIUM NITRIDE;
HYDROCHLORIC ACID;
III-V SEMICONDUCTORS;
LASER ABLATION;
LASER CHEMISTRY;
LASER PULSES;
MICROCHANNELS;
NITRIDES;
OPTICAL WAVEGUIDES;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR LASERS;
SINGLE CRYSTALS;
ABLATION DEBRIS;
FEMTOSECOND (FS) LASER;
FS-LASER DIRECT WRITINGS;
GALLIUM NITRIDE (GAN);
GAN SUBSTRATE;
HIGH NUMERICAL APERTURES;
PROCESSING METHOD;
THRESHOLD FLUENCES;
WIDE BAND GAP SEMICONDUCTORS;
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EID: 70349446484
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2009.04.159 Document Type: Article |
Times cited : (44)
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References (13)
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