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Volumn 82, Issue 3 SPEC. ISS., 2006, Pages 479-483

Deep etching of epitaxial gallium nitride film by multiwavelength excitation process using F2 and KrF excimer lasers

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; ETCHING; EXCIMER LASERS; IRRADIATION; LASER ABLATION; THIN FILMS;

ETCHING RATE; KRF EXCIMER LASERS;

GALLIUM NITRIDE;

EID: 29144433385 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-005-3409-8 Document Type: Article

Times cited : (14)

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