KrF excimer laser induced ablation-planarization of GaN surface

Applied Surface Science

Volumn 148, Issue 1, 1999, Pages 133-136

  Akane, T ^a   Sugioka, K ^a   Ogino, H ^b   Takai, H ^b   Midorikawa, K ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b TOKYO DENKI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; EPITAXIAL GROWTH; ETCHING; EXCIMER LASERS; FILM GROWTH; HYDROCHLORIC ACID; LASER ABLATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM NITRIDE; PLANARIZATION;

SEMICONDUCTING FILMS;

EID: 0032658736     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00156-7     Document Type: Article

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