GaN ablation etching by simultaneous irradiation with F2 laser and KrF excimer laser

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1388-1391

  Akane, Toshimitsu ^a   Sugioka, Koji ^a   Hammura, Kiyotaka ^a   Aoyagi, Yoshinobu ^a   Midorikawa, Katsumi ^a   Obata, Kotaro ^b   Toyoda, Koichi ^b   Nomura, Shintaro ^c  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ETCHING; EXCIMER LASERS; IRRADIATION; LASER ABLATION; LIGHT ABSORPTION; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; SURFACES;

ABLATION ETCHING; FLUENCE;

GALLIUM NITRIDE;

EID: 0035535273     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1385683     Document Type: Conference Paper

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