Reactive ion etching of GaN in BCl3/N2 plasmas

Journal of the Electrochemical Society

Volumn 144, Issue 8, 1997, Pages

  Fedison, J B ^a,b   Chow, T P ^a,b   Lu, H ^a   Bhat, I B ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRON MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; PHOTORESISTS; PLASMAS; REACTIVE ION ETCHING; SAPPHIRE; SURFACE STRUCTURE;

BARIUM TRICHLORIDE; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031213386     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837863     Document Type: Article

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