F2 laser etching of GaN

Applied Surface Science

Volumn 168, Issue 1-4, 2000, Pages 335-339

  Akane, T ^a   Sugioka, K ^a   Nomura, S ^b   Hammura, K ^a   Aoki, N ^c   Toyoda, K ^c   Aoyagi, Y ^a   Midorikawa, K ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c National Institute of Advanced Industrial Science and Technology   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; EXCIMER LASERS; IRRADIATION; LASER ABLATION; PHOTOIONIZATION;

LASER-INDUCED DIRECT ETCHING; PLANARIZATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034516042     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00783-2     Document Type: Article

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