GaN-based LEDs with mesh ITO p-contact and nanopillars

IEEE Photonics Technology Letters

Volumn 21, Issue 18, 2009, Pages 1293-1295

  Lai, Wei Chih ^a   Chen, P H ^a   Chang, Li Chuan ^b   Kuo, Cheng Huang ^b   Sheu, Jinn Kong ^a   Tun, Chun Ju ^c   Shei, S C ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^d NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

GaN; Light emitting diode (LED); Mesh indium tin oxide (ITO) contact; Nanopillars; Patterned sapphire substrate (PSS)

Indexed keywords

GAN; LIGHT-EMITTING DIODE (LED); MESH INDIUM-TIN-OXIDE (ITO) CONTACT; NANOPILLARS; PATTERNED SAPPHIRE SUBSTRATE (PSS);

CORUNDUM; CURRENT DENSITY; DIODES; GALLIUM NITRIDE; INDIUM; LEAKAGE CURRENTS; LIGHT EMISSION; LIGHT EMITTING DIODES; NANORODS; ORGANIC LIGHT EMITTING DIODES (OLED); SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; TIN; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 70349419691     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2025380     Document Type: Article

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