Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 587-591

  Lee, Wonseok ^a   Limb, Jae ^a   Ryou, Jae Hyun ^a   Yoo, Dongwon ^a   Chung, Theodore ^a   Dupuis, Russell D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Gallium nitride (GaN); InGaN; Light emitting diode (LED); Metalorganic chemical vapor deposition (MOCVD)

Indexed keywords

EPITAXIAL GROWTH; LIGHT EMITTING DIODES; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; TEMPERATURE DISTRIBUTION;

ANNEALING EFFECTS; GROWTH TEMPERATURES; INGAN; PHOTOLUMINESCENCE INTENSITY; STRUCTURAL QUALITY;

GALLIUM NITRIDE;

EID: 33646721584     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0104-2     Document Type: Conference Paper

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