Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 4, 2009, Pages 1137-1143

  Lee, Ya Ju ^a   Chiu, Ching Hua ^b   Ke, Chih Chun ^b   Lin, Po Chun ^b   Lu, Tien Chang ^b   Kuo, Hao Chung ^b   Wang, Shing Chung ^b  

^a NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

GaN; Internal quantum efficiency; LEDs

Indexed keywords

BAND FILLING EFFECTS; CARRIER INJECTION; COULOMB SCREENING; DISLOCATION DEFECTS; EMISSION-PEAK ENERGY; EXCITATION POWER; GAN; HIGH EFFICIENCY; INGAN/GAN; INGAN/GAN MQWS; INJECTED CARRIERS; INTERNAL QUANTUM EFFICIENCY; LED DEVICE; LEDS; MULTIPLE QUANTUM WELLS; NONRADIATIVE CENTERS; PATTERNED SAPPHIRE SUBSTRATE; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES;

ACTIVATION ENERGY; CARRIER LIFETIME; CORUNDUM; GALLIUM ALLOYS; GALLIUM NITRIDE; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

QUANTUM EFFICIENCY;

EID: 70349327944     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2014967     Document Type: Article

References (22)

1. S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode: The Complete Story, 2nd ed. Berlin, Germany: Springer-Verlag, 2000.
2. E. F. Schubert, Light-Emitting Diodes, 2nd ed. Cambridge, U.K.: Cambridge Univ. Press, 2006.
3. R. D. Dupuis and M. R. Krames, "History, development, and applications of high-brightness visible light-emitting diodes," IEEE J. Lightw. Technol., vol.26, no.9, pp. 1154-1171, May 2008.
4. S. Nakamura, "The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes," Science, vol.14, pp. 956-961, 1998. (Pubitemid 28399238)
5. M. Broditsky and E. Yablonovitch, "Light-emitting diode extraction effi-ciency," in Proc. SPIE, 1997, vol.3002, pp. 119-122.
6. A. Billeb, W. Grieshaber, D. Stocker, E. F. Schubert, and R. F. Karlicek Jr., "Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures," Appl. Phys. Lett., vol.70, pp. 2790-2792, 1997.
7. Y. J. Lee, H. C. Kuo, S. C. Wang, T. C. Hsu, M. H. Hsieh, M. J. Jou, and B. J. Lee, "Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening," IEEE Photon. Technol. Lett., vol.17, no.11, pp. 2289-2291, Nov. 2005.
8. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett., vol.84, pp. 855-857, 2004.
9. S. Fan, P. R. Villeneuve, J. D. Joannopoulos, and E. F. Schubert, "High extraction efficiency of spontaneous emission from slabs of photonic crystals," Phys. Rev. Lett., vol.78, pp. 3294-3297, 1997.
10. T. N. Oder, K. H. Kim, J. Y. Lin, and H. X. Jiang, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett., vol.84, pp. 466-468, 2004.
11. C. C. Kao, H. C. Kuo, H. W. Huang, J. T. Chu, Y. C. Peng, Y. L. Hsieh, C. Y. Luo, S. C. Wang, C. C. Yu, and C. F. Lin, "Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls," IEEE Photon. Technol. Lett., vol.17, no.2, pp. 19-21, Jan. 2005.
12. Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, and S. C. Wang, "GaN-based LEDs with Al-deposited V-shape sapphire facet mirror," IEEE Photon. Technol. Lett., vol.18, no.5, pp. 724-726, Mar. 2006.
13. S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Ya-mada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, "Internal quantum efficiency of highly-efficient Inx Ga1 -x N-based near-ultraviolet light-emitting diodes," Appl. Phys. Lett., vol.83, pp. 4906-4908, 2003.
14. Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, and S. C. Wang, "Enhancing output power of GaN-based LEDs grown on chemical wet etching patterned sapphire substrate," IEEE Photon. Technol. Lett., vol.18, no.10, pp. 1152-1154, May 2006.
15. Y.-J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang, K. W. Ng, K. M. Lau, Z.-P. Yang, A. S. P. Chang, and S.-Y. Lin, "Study of GaN-based light emitting diodes grown on chemical wet etching-patterned sapphire substrate with V-shaped pits roughening surfaces," IEEE J. Lightw. Technol., vol.26, no.11, pp. 1455-1463, Jun. 2008.
16. I. Ma'rtil, E. Redondo, and A. Ojeda, "Influence of defects on the electrical and optical characteristics of blue light-emitting diodes based on III-V nitrides," J. Appl. Phys., vol.81, pp. 2442-2444, 1997.
17. X. A. Cao, E. B. Stokes, P. M. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, "Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes," IEEE Electron Device Lett., vol.23, no.9, pp. 535-537, Sep. 2002. (Pubitemid 35022947)
18. S. Chichibu, T. Sota, K. Wada, and S. Nakamura, "Exciton localization in InGaN quantum well devices," J. Vac. Sci. Technol. B, vol.16, pp. 2204-2214, 1998.
19. T. Wang, D. Nakagawa, J. Wang, T. Sugahara, and S. Sakai, "Photolumi-nescence investigation of InGaN/GaN single quantum well and multiple quantum wells," Appl. Phys. Lett., vol.73, pp. 3571-3573, 2007.
20. T. Kuroda and A. Tackeuchi, "Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells," J. Appl. Phys., vol.92, pp. 3071-3074, 2002.
21. Y. Narukawa, S. Saijou, Y. Kawakami, S. Fujita, T. Mukai, and S. Naka-mura, "Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0 . 0 2 Ga0 . 9 8 N active layer," Appl. Phys. Lett., vol.74, pp. 558-560, 1999.
22. Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ""S-shaped" temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells," Appl. Phys. Lett., vol. 73, pp. 1370-1372, 1998.