GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror

IEEE Photonics Technology Letters

Volumn 18, Issue 5, 2006, Pages 724-726

  Lee, Y J ^a,b   Hwang, J M ^b   Hsu, T C ^b   Hsieh, M H ^b   Jou, M J ^b   Lee, B J ^b   Lu, T C ^a   Kuo, H C ^a   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

GaN; Light emitting diode (LED); Sapphire chemical wet etching

Indexed keywords

CHEMICAL WET ETCHING; FACET MIRRORS; GAN; GAN BASED LED; GAN LIGHT-EMITTING DIODES; GAN-BASED LIGHT-EMITTING DIODES; GEOMETRICAL SHAPES; GUIDED LIGHT; INJECTION CURRENTS; LIGHT OUTPUT POWER; LIGHT-EXTRACTION EFFICIENCY;

DIODES; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; REFLECTION; SAPPHIRE; WET ETCHING;

LIGHT EMITTING DIODES;

EID: 34249280725     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.871136     Document Type: Article

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