Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening

IEEE Photonics Technology Letters

Volumn 17, Issue 11, 2005, Pages 2289-2291

  Lee, Y J ^a   Kuo, H C ^a   Wang, S C ^a   Hsu, T C ^b   Hsieh, M H ^b   Jou, M J ^b   Lee, B J ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

AlGaInP; Light emitting diode (LED); Surface roughening

Indexed keywords

ATOMIC FORCE MICROSCOPY; BONDING; ETCHING; LIGHT SCATTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OHMIC CONTACTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE ROUGHNESS;

ADHESIVE LAYER BONDING TECHNIQUE; INTERNAL REFLECTION; SEMICONDUCTOR AIR INTERFACE; WET ETCHING;

LIGHT EMITTING DIODES;

EID: 27744433386     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.858153     Document Type: Article

References (11)

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