SCOPUS 정보 검색 플랫폼

Diamond and Related Materials

Volumn 9, Issue 3, 2000, Pages 520-523

Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering

(6) Chalker, P R a Morrice, D a Joyce, T B a Noakes, T C Q b Bailey, P b Considine, L c

a UNIVERSITY OF LIVERPOOL (United Kingdom)

b DARESBURY LABORATORY (United Kingdom)

c THOMAS SWAN AND CO LTD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DECOMPOSITION; INTERDIFFUSION (SOLIDS); LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR STRUCTURE; NITROGEN; PHASE SEPARATION; SEMICONDUCTOR LASERS;

INDIUM GALLIUM NITRIDE; MEDIUM ENERGY ION SCATTERING (MEIS);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033728805 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-9635(99)00259-9 Document Type: Article

Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.