Photoluminescence enhancement by rapid thermal annealing for ZnO epitaxial films grown on Si (100) by pulsed laser deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 5, 2009, Pages 1231-1234

  He, Q ^a   Wang, X N ^a   Wang, H B ^a   Zhu, J H ^a   Wang, Hao ^a   Jiang, Y ^b  

^a HUBEI UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ADVERSE EFFECT; DEEP LEVEL EMISSION; HOMO-BUFFER LAYERS; LUMINESCENCE PEAK; OPTICAL QUALITIES; PHOTOLUMINESCENCE ENHANCEMENT; PHOTOLUMINESCENCE MEASUREMENTS; PULSED LASER; ROOM TEMPERATURE; SI (100) SUBSTRATE; SI(1 0 0); SINGLE-CRYSTALLINE FILM; ULTRAVIOLET EMISSION; ZNO; ZNO EPITAXIAL FILMS; ZNO FILMS;

EPITAXIAL FILMS; EPITAXIAL GROWTH; OPTICAL PROPERTIES; OXYGEN; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

RAPID THERMAL ANNEALING;

EID: 70349162396     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3207952     Document Type: Article

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