PL dependence of ZnO films grown on Si with various buffer layers by RF magnetron sputtering

Electrochemical and Solid-State Letters

Volumn 7, Issue 7, 2004, Pages

  Lin, Chin Ching ^a   Chen, San Yuan ^a   Cheng, Syh Yuh ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ENERGY DISPERSIVE SPECTROSCOPY; EXCITONS; GRAIN BOUNDARIES; MAGNETRON SPUTTERING; MICROSTRUCTURE; PHOTOLUMINESCENCE; SILICA; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; X RAY DIFFRACTION; ZINC OXIDE;

BUFFER LAYERS; ELECTRON EVAPORATION; LARGE-SCALE ELECTRONIC INTEGRATION DEVICES; ULTRAVIOLET EMISSIONS;

THIN FILMS;

EID: 3042794791     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1736594     Document Type: Article

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