Effects of oxygen pressure and Mn-doping on the electrical and dielectric properties of Bi5Nb3O15 thin film grown by pulsed laser deposition

Journal of Physics D: Applied Physics

Volumn 42, Issue 17, 2009, Pages

  Seong, T G ^a   Cho, K H ^a   Choi, J Y ^a   Nahm, S ^a   Kang, C Y ^b   Yoon, S J ^b   Kim, J H ^c  

^a Korea University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Korea Institute of Ceramic Engineering and Technology (KICET)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN FIELD; DIELECTRIC CONSTANTS; ELECTRICAL AND DIELECTRIC PROPERTIES; ELECTRICAL PROPERTY; LOW-LEAKAGE CURRENT; MN-DOPED; MN-DOPING; OXYGEN PRESSURE;

CERAMIC CAPACITORS; DEPOSITION; DIELECTRIC PROPERTIES; DOPING (ADDITIVES); MANGANESE; MANGANESE COMPOUNDS; NIOBIUM; OXYGEN; PULSED LASER DEPOSITION; THIN FILMS;

OXYGEN VACANCIES;

EID: 70349133580     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/17/175402     Document Type: Article

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