SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of the Electrochemical Society

Volumn 155, Issue 4, 2008, Pages

Structural and electrical properties of Bi6Ti 5TeO22 thin films grown on Pt/Ti/SiO2/Si substrate

(9) Choi, Chang Hak a Choi, Joo Young a Cho, Kyung Hoon a Yoo, Myong Jae a Choi, Jae Hong a Nahm, Sahn a Kang, Chong Yun b Yoon, Seok Jin b Lee, Hwack Joo c

a Korea University (South Korea)

b Korea Institute of Science and Technology (South Korea)

c Korea Research Institute of Standards and Science (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; FILM GROWTH; GROWTH TEMPERATURE; MAGNETRON SPUTTERING; MIM DEVICES; PERMITTIVITY; PLATINUM; SILICA; SUBSTRATES;

LEAKAGE CURRENT DENSITY; METAL INSULATOR METAL CAPACITORS;

THIN FILMS;

EID: 40549124391 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2839566 Document Type: Article

Times cited : (15)

References (18)

1
- 0033737207
- 0957-4522
- S. K. Bhattacharya and R. R. Tummala, J. Mater. Sci. Mater. Electron., 11, 253 (2000). 0957-4522
- (2000) J. Mater. Sci. Mater. Electron. , vol.11 , pp. 253
- Bhattacharya, S.K.¹ Tummala, R.R.²

2
- 0037116556
- 0935-9648
- C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater., 14, 99 (2002). 0935-9648
- (2002) Adv. Mater. , vol.14 , pp. 99
- Dimitrakopoulos, C.D.¹ Malenfant, P.R.L.²

3
- 0242496378
- APPLAB 0003-6951 10.1063/1.1620676.
- M. Kitamura, T. Imada, and Y. Arakawa, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1620676, 83, 3410 (2003).
- (2003) Appl. Phys. Lett. , vol.83 , pp. 3410
- Kitamura, M.¹ Imada, T.² Arakawa, Y.³

4
- 6344252882
- JMREEE 0884-2914 10.1557/JMR.2004.0387.
- T. Kim, A. I. Kingon, J. P. Maria, and R. T. Croswell, J. Mater. Res. JMREEE 0884-2914 10.1557/JMR.2004.0387, 19, 2841 (2004).
- (2004) J. Mater. Res. , vol.19 , pp. 2841
- Kim, T.¹ Kingon, A.I.² Maria, J.P.³ Croswell, R.T.⁴

5
- 14744291962
- NMAACR 1476-1122 10.1038/nmat1334.
- A. I. Kingon and S. Srinivasan, Nat. Mater. NMAACR 1476-1122 10.1038/nmat1334, 4, 233 (2005).
- (2005) Nat. Mater. , vol.4 , pp. 233
- Kingon, A.I.¹ Srinivasan, S.²

6
- 0033525158
- SCIEAS 0036-8075 10.1126/science.283.5403.822.
- C. D. Dimitrakopoulos, S. Purushothanman, J. Kymissis, A. Callegari, and J. M. Shaw, Science SCIEAS 0036-8075 10.1126/science.283.5403.822, 283, 822 (1999).
- (1999) Science , vol.283 , pp. 822
- Dimitrakopoulos, C.D.¹ Purushothanman, S.² Kymissis, J.³ Callegari, A.⁴ Shaw, J.M.⁵

7
- 28844463440
- APPLAB 0003-6951 10.1063/1.2139838.
- K. T. Kang, M. H. Lim, H. G. Kim, Y. W. Choi, H. L. Tuller, I. D. Kim, and J. M. Hong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2139838, 87, 242908 (2005).
- (2005) Appl. Phys. Lett. , vol.87 , pp. 242908
- Kang, K.T.¹ Lim, M.H.² Kim, H.G.³ Choi, Y.W.⁴ Tuller, H.L.⁵ Kim, I.D.⁶ Hong, J.M.⁷

8
- 0013102366
- OERLAU 1566-1199 10.1016/S1566-1199(02)00034-4.
- C. Bartic, H. Jansen, A. Campitelli, and S. Borghs, Org. Electron. OERLAU 1566-1199 10.1016/S1566-1199(02)00034-4, 3, 65 (2002).
- (2002) Org. Electron. , vol.3 , pp. 65
- Bartic, C.¹ Jansen, H.² Campitelli, A.³ Borghs, S.⁴

9
- 0037757864
- OERLAU 1566-1199 10.1016/S1566-1199(03)00005-3.
- L. A. Majewski, M. Grell, S. D. Ogier, and J. Veres, Org. Electron. OERLAU 1566-1199 10.1016/S1566-1199(03)00005-3, 4, 27 (2003).
- (2003) Org. Electron. , vol.4 , pp. 27
- Majewski, L.A.¹ Grell, M.² Ogier, S.D.³ Veres, J.⁴

10
- 22944458513
- EDLEDZ 0741-3106 10.1109/LED.2005.851241.
- K. C. Chiang, C. C. Huang, A. Chin, W. J. Chen, S. P. McAlister, H. F. Chiu, J. R. Chen, and C. C. Chi, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2005.851241, 26, 504 (2005).
- (2005) IEEE Electron Device Lett. , vol.26 , pp. 504
- Chiang, K.C.¹ Huang, C.C.² Chin, A.³ Chen, W.J.⁴ McAlister, S.P.⁵ Chiu, H.F.⁶ Chen, J.R.⁷ Chi, C.C.⁸

11
- 33746078450
- APPLAB 0003-6951 10.1063/1.2220485.
- I. D. Kim, M. H. Lim, K. T. Kang, H. G. Kim, and S. Y. Choi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2220485, 89, 022905 (2006).
- (2006) Appl. Phys. Lett. , vol.89 , pp. 022905
- Kim, I.D.¹ Lim, M.H.² Kang, K.T.³ Kim, H.G.⁴ Choi, S.Y.⁵

12
- 33646699079
- APPLAB 0003-6951 10.1063/1.2202129.
- J. H. Park, W. S. Lee, N. J. Seong, S. G. Yoon, S. H. Son, H. M. Chung, J. S. Moon, H. J. Jin, S. E. Lee, J. W. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2202129, 88, 192902 (2006).
- (2006) Appl. Phys. Lett. , vol.88 , pp. 192902
- Park, J.H.¹ Lee, W.S.² Seong, N.J.³ Yoon, S.G.⁴ Son, S.H.⁵ Chung, H.M.⁶ Moon, J.S.⁷ Jin, H.J.⁸ Lee, S.E.⁹ Lee, J.W.¹⁰

13
- 21644470191
- In press.
- K. P. Hong, Y. H. Jeong, S. Nahm, C. Y. Kang, and S. Y. Yoon, IEEE Electron Device Lett., In press.
- IEEE Electron Device Lett.
- Hong, K.P.¹ Jeong, Y.H.² Nahm, S.³ Kang, C.Y.⁴ Yoon, S.Y.⁵

14
- 33750230952
- 0002-7820
- M. Udovic, M. Valant, B. Jancar, D. Suvorov, A. Meden, and A. Kocevar, J. Am. Ceram. Soc., 89, 3462 (2006). 0002-7820
- (2006) J. Am. Ceram. Soc. , vol.89 , pp. 3462
- Udovic, M.¹ Valant, M.² Jancar, B.³ Suvorov, D.⁴ Meden, A.⁵ Kocevar, A.⁶

15
- 34547659704
- 0002-7820
- M. Udovic and D. Suvorov, J. Am. Ceram. Soc., 90, 2404 (2007). 0002-7820
- (2007) J. Am. Ceram. Soc. , vol.90 , pp. 2404
- Udovic, M.¹ Suvorov, D.²

16
- 2342526572
- 0002-7820
- M. Udovic, M. Valant, and D. Suvorov, J. Am. Ceram. Soc., 87, 591 (2004). 0002-7820
- (2004) J. Am. Ceram. Soc. , vol.87 , pp. 591
- Udovic, M.¹ Valant, M.² Suvorov, D.³

17
- 0942278196
- 0955-2219
- M. Udovic, M. Valant, and D. Suvorov, J. Eur. Ceram. Soc., 24, 953 (2004). 0955-2219
- (2004) J. Eur. Ceram. Soc. , vol.24 , pp. 953
- Udovic, M.¹ Valant, M.² Suvorov, D.³

18
- 0035507203
- 0022-4596
- L. Pöppl, I. Földivári, and G. Várhegyi, J. Solid State Chem., 161, 365 (2001). 0022-4596
- (2001) J. Solid State Chem. , vol.161 , pp. 365
- Pöppl, L.¹ Földivári, I.² Várhegyi, G.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.