Investigation on the electric properties of Bi1.5 ZnNb1.5O7 thin films grown on TiN substrate for MIM capacitors

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 334-337

  Hong, Kyoung Pyo ^a   Cho, Kyung Hoon ^a   Jeong, Young Hun ^a   Nahm, Sahm ^a   Kang, Chong Yun ^b   Yoon, Seok Jin ^b  

^a Korea University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Bi1.5ZnNb1.5O7; High k; Metal insulator metal (MIM) capacitor; Temperature coefficient of capacitance (TCC); Voltage coefficient of capacitance (VCC)

Indexed keywords

BISMUTH COMPOUNDS; CAPACITANCE; CAPACITORS; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; PERMITTIVITY; SUBSTRATES; THIN FILMS; TITANIUM NITRIDE;

METAL-INSULATOR-METAL (MIM) CAPACITOR; TEMPERATURE COEFFICIENT OF CAPACITANCE (TCC); VOLTAGE COEFFICIENT OF CAPACITANCE (VCC);

MIM DEVICES;

EID: 41749110260     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.918271     Document Type: Article

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