Silicon germanium oxide (SixGe1-xOy) infrared material for uncooled infrared detection

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7298, Issue , 2009, Pages

  Cheng, Q ^a   Almasri, M ^a  

^a UNIVERSITY OF MISSOURI   (United States)

Author keywords

Amorphous silicon germanium oxide; Infrared detector; SiGeO; TCR; Uncooled microbolometer

Indexed keywords

AMORPHOUS SILICON GERMANIUM OXIDE; ARGON ENVIRONMENT; ATOMIC COMPOSITIONS; DEPOSITION CHAMBERS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; FILM COMPOSITION; GE THIN FILMS; INFRARED MATERIAL; OXYGEN FLOW; RF-MAGNETRON SPUTTERING; RF-POWER; ROOM TEMPERATURE; SENSITIVE MATERIALS; SIGEO; SILICON GERMANIUM; SILICON TARGETS; TCR; TEMPERATURE COEFFICIENT OF RESISTANCE; UNCOOLED INFRARED DETECTION; UNCOOLED MICROBOLOMETER;

ARGON; ATOMIC SPECTROSCOPY; BICMOS TECHNOLOGY; BOLOMETERS; CHEMICAL ANALYSIS; DEPOSITION; DETECTORS; ELECTRIC REACTORS; GERMANIUM; INFRARED DETECTORS; INFRARED RADIATION; MAGNETRON SPUTTERING; OXYGEN; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; TARGETS; TEMPERATURE SENSORS; THERMAL CONDUCTIVITY OF SOLIDS; THIN FILM DEVICES; THIN FILMS; X RAY SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 69949112418     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.818866     Document Type: Conference Paper

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