4-terminal FinFETs with high threshold voltage controllability

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 207-208

  Liu, Y X ^a   Masahara, M ^a   Ishii, K ^a   Sekigawa, T ^a   Takashima, H ^a   Yamauchi, H ^a   Tsutsumi, T ^a   Sakamoto, K ^a   Suzuki, E ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FINFETS; GATE WORK FUNCTION; POWER CIRCUIT DESIGN; WET ETCHING;

MASKS; POLYSILICON; POWER CONTROL; REACTIVE ION ETCHING; THRESHOLD VOLTAGE; VLSI CIRCUITS; VOLTAGE CONTROL;

FIELD EFFECT TRANSISTORS;

EID: 18044390851     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2004.1367867     Document Type: Conference Paper

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