Low power and stable FinFET SRAM with static independent gate bias for enhanced integration density

Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

Volumn , Issue , 2007, Pages 443-446

  Tawfik, Sherif A ^a   Kursun, Volkan ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERNATIONAL CONFERENCES; SRAM CELLS;

CELLS; COMPUTER NETWORKS; CYTOLOGY; FIELD EFFECT TRANSISTORS; NETWORKS (CIRCUITS); RANDOM ACCESS STORAGE; SYSTEM STABILITY; TRANSISTORS;

STATIC RANDOM ACCESS STORAGE;

EID: 49749097120     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICECS.2007.4511025     Document Type: Conference Paper

References (10)

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10. Z. Liu and V. Kursun, "High Read Stability and Low Leakage Cache Memory Cell," Proceedings of the IEEE International Symposium on Circuits and Systems, pp. 2774-2777, May 2007.