Compact FinFET memory circuits with p-type data access transistors for low leakage and robust operation

Proceedings of the 9th International Symposium on Quality Electronic Design, ISQED 2008

Volumn , Issue , 2008, Pages 855-860

  Tawfik, Sherif A ^a   Kursun, Volkan ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-COUPLED; DATA ACCESS; DATA STORAGE; ELECTRONIC DESIGNS; IDLE MODE; INTEGRATION DENSITIES; INTERNATIONAL SYMPOSIUM; LEAKAGE POWER; LEAKAGE POWER CONSUMPTION; LOW LEAKAGE; MEMORY CIRCUITS; MINIMUM-SIZED TRANSISTORS; READ OPERATIONS; READ STABILITY; ROBUST OPERATION; SRAM CELLS; VOLTAGE DISTURBANCES;

CELLS; CMOS INTEGRATED CIRCUITS; CYTOLOGY; DATA STORAGE EQUIPMENT; ELECTRONICS ENGINEERING; ENERGY STORAGE; FIELD EFFECT TRANSISTORS; NETWORKS (CIRCUITS); STANDARDS; STATIC RANDOM ACCESS STORAGE; TRANSISTORS;

DATA REDUCTION;

EID: 49749139400     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISQED.2008.4479850     Document Type: Conference Paper

References (11)

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