An independent-gate FinFET SRAM cell for high data stability and enhanced integration density

Proceedings - 20th Anniversary IEEE International SOC Conference

Volumn , Issue , 2007, Pages 63-66

  Liu, Zhiyu ^a   Tawfik, Sherif A ^a   Kursun, Volkan ^a  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

Author keywords

Active power; Cache memory; Data stability; Double gate mosfet; Standby power; Static noise margin

Indexed keywords

CELLS; CMOS INTEGRATED CIRCUITS; COMPUTER NETWORKS; CYTOLOGY; NETWORKS (CIRCUITS); PROGRAMMABLE LOGIC CONTROLLERS; STANDARDS; TRANSISTORS;

ACTIVE POWER; CACHE MEMORY; DATA STABILITY; DOUBLE GATE MOSFET; STANDBY POWER; STATIC NOISE MARGIN;

STATIC RANDOM ACCESS STORAGE;

EID: 49749147773     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOCC.2007.4545427     Document Type: Conference Paper

References (10)

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