Explosive crystallization of amorphous silicon films by flash lamp annealing

Journal of Applied Physics

Volumn 106, Issue 4, 2009, Pages

  Ohdaira, Keisuke ^a   Fujiwara, Tomoko ^a   Endo, Yohei ^a   Nishizaki, Shogo ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI FILMS; ADDITIONAL HEATING; AMORPHOUS SI; AMORPHOUS SILICON FILM; EXPLOSIVE CRYSTALLIZATIONS; FINE GRAINS; FLASH LAMP; FLASH LAMP ANNEALING; GLASS SUBSTRATES; HIGH-THROUGHPUT; LATERAL DIRECTIONS; LIQUID-PHASE EPITAXY; PERIODIC MICROSTRUCTURE; POLY-SI FILMS; SOLID-PHASE;

AMORPHOUS SILICON; CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY MEASUREMENT; EPITAXIAL GROWTH; EXPLOSIVES; PLASMAS; POLYSILICON;

AMORPHOUS FILMS;

EID: 69749113147     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3195089     Document Type: Article

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