Formation of highly uniform micrometer-order-thick polycrystalline silicon films by flash lamp annealing of amorphous silicon on glass substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 12, 2007, Pages 7603-7606

  Ohdaira, Keisuke ^a   Endo, Yohei ^a   Fujiwara, Tomoko ^a   Nishizaki, Shogo ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Crystallization; Flash lamp annealing; Millisecond treatment; Poly Si; Solar cell

Indexed keywords

BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SOLAR CELLS;

FLASH LAMP ANNEALING; MILLISECOND TREATMENT; THERMAL DAMAGE;

THIN FILMS;

EID: 37549015593     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.7603     Document Type: Article

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