Drastic improvement of minority carrier lifetimes observed in hydrogen-passivated flash-lamp-crystallized polycrystalline silicon films

Applied Physics Express

Volumn 2, Issue 6, 2009, Pages

  Ohdaira, Keisuke ^a   Takemoto, Hiroyuki ^a   Shiba, Kazuhiro ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; FLASH LAMP ANNEALING; FURNACE ANNEALING; GLASS SUBSTRATES; MINORITY CARRIER DIFFUSION LENGTH; MINORITY CARRIER LIFETIMES; POLY-SI FILMS; POLYCRYSTALLINE SILICON (POLY-SI); POLYCRYSTALLINE SILICON FILMS; THIN-FILM SOLAR CELLS;

AMORPHOUS SILICON; DANGLING BONDS; HYDROGEN; PASSIVATION; POLYCRYSTALLINE MATERIALS; POLYSILICON;

AMORPHOUS FILMS;

EID: 67949089749     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.061201     Document Type: Article

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