Erratum to "advanced thin film technology for ultrahigh resolution X-ray microscopy" [Ultramicroscopy 109 (2009) 1360-1364] (DOI:10.1016/j.ultramic.2009.07.005);Advanced thin film technology for ultrahigh resolution X-ray microscopy

Ultramicroscopy

Volumn 109, Issue 11, 2009, Pages 1360-1364

  Vila Comamala, Joan ^a   Jefimovs, Konstantins ^b   Raabe, Jörg ^a   Pilvi, Tero ^c   Fink, Rainer H ^d   Senoner, Mathias ^e   Maaßdorf, Andre ^f   Ritala, Mikko ^c   David, Christian ^a  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^c UNIVERSITY OF HELSINKI   (Finland)

^d UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^e BAM FEDERAL INSTITUTE FOR MATERIALS RESEARCH AND TESTING   (Germany)

^f LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

Atomic layer deposition; Electron beam lithography; X ray diffractive optics; X ray microscopy

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ION BEAMS; METALLORGANIC VAPOR PHASE EPITAXY; THIN FILMS; VAPOR DEPOSITION;

ADVANCED THIN FILMS; FABRICATION AND CHARACTERIZATIONS; FOCUSED ION BEAM INDUCED DEPOSITION; FUNDAMENTAL LIMITATIONS; TRANSMISSION X-RAYS; ULTRAHIGH RESOLUTION; X RAY MICROSCOPY; X-RAY DIFFRACTIVE;

X RAY MICROSCOPES;

ANALYTICAL PARAMETERS; ARTICLE; ELECTRON BEAM; FILM; IMAGE QUALITY; MICROSCOPY; OPTICS; PHOTON; ROENTGEN MICROSCOPY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SYNTHESIS; TECHNIQUE; TECHNOLOGY; VAPOR;

EID: 69749086855     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2009.11.012     Document Type: Erratum

References (21)

1. Ade H., Zhang X., Cameron S., Costello C., Kirz J., and Williams S. Science 258 (1992) 972-975
2. Kirz J., Jacobsen C., and Howells M. Q. Rev. Biophys. 28 (1995) 33-130
3. Jacobsen C., and Kirz J. Nat. Struct. Biol. 5 (1998) 650-653
4. Schneider G. Anal. Bioanal. Chem. 376 (2003) 558-561
5. Thieme J., McNulty I., Paterson D., and Vogt S. Environ. Sci. Technol. 41 (2007) 6885-6887
6. Fischer P. IEEE Trans. Magn. 44 (2008) 1900-1904
7. Ishida M., Fujita J., Ogura T., Ochiai Y., Ohshima E., and Momoda J. Jpn. J. Appl. Phys. 42 (2003) 3913-3916
8. Chao W., Harteneck B.H., Alexander Liddle J., Anderson E.H., and Attwood D.T. Nature 435 (2005) 1210-1213
9. Leskelä M., and Ritala M. Angew. Chem. Int. Ed. 42 (2003) 5548-5554
10. Rudolph D., and Schmahl G. Ann. N. Y. Acad. Sci. 342 (1980) 94
11. Tamura S., Yasumoto M., Kamijo N., Suzuki Y., Awaji M., Takeuchid A., Uesugi K., Terada Y., and Takano H. Vacuum 80 (2006) 823-827
12. Kang H.C., Maser J., Stephenson G.B., Liu C., Conley R., Macrander A.T., and Vogt S. Phys. Rev. Lett. 96 (2006) 127-401
13. Kang H.C., Yan H., Winarski R.P., Holt M.V., Maser J., Liu C., Conley R., Vogt S., Macrander A.T., and Stephenson G.B. Appl. Phys. Lett. 92 (2008) 221114
14. Jefimovs K., Vila-Comamala J., Pilvi T., Raabe J., Ritala M., and David C. Phys. Rev. Lett. 99 (2007) 264-801
15. David C., and Hambach D. Microelectron. Eng. 46 (1999) 219-222
16. Vila-Comamala J., Jefimovs K., Raabe J., Kaulich B., and David C. Microelectron. Eng. 85 (2008) 1241-1244
17. Aaltonen T., Ritala M., Sammelselg V., and Leskelä M. J. Electrochem. Soc. 151 (2004) G489-G492
18. Senoner M., Wirth T., Unger W., Österle W., Kaiander I., Sellin R.L., and Bimberg D. Surf. Interface Anal. 36 (2004) 1423-1426
19. Senoner M., and Unger W. Surf. Interface Anal. 39 (2007) 16-25
20. Flechsig U., Quitmann C., Raabe J., Böge M., Fink R.H., and Ade H. AIP Conf. Proc. 879 (2007) 505-508
21. Raabe J., Tzvetkov G., Flechsig U., Böge M., Jaggi A., Sarafimov B., Vernooij M.G.C., Huthwelker T., Ade H., Kilcoyne D., Tyliszczak T., Fink R.H., and Quitmann C. Rev. Sci. Instrum. 79 (2008) 113-704