Growth and characterization of the AlInGaN quaternary protective layer to suppress the thermal damage of InGaN multiple quantum wells

Journal of Crystal Growth

Volumn 310, Issue 16, 2008, Pages 3881-3883

  Lee, Sung Nam ^a   Paek, H S ^a   Kim, H ^a   Kim, K K ^a   Cho, Y H ^b   Jang, T ^a   Park, Y ^a  

^a Samsung Electro Mechanics   (South Korea)

^b Chungbuk National University   (South Korea)

Author keywords

A1. Atomic force microscopy; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

ALUMINUM; EPITAXIAL GROWTH; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR QUANTUM WIRES; VAPOR DEPOSITION; WELLS;

ALINGAN; CHEMICAL VAPORS; CRYSTAL QUALITIES; MULTIPLE QUANTUM WELL (MQM); MULTIPLE QUANTUM WELLS (MQWS); OPTICAL (PET) (OPET); PROTECTIVE LAYERS; QUATERNARY EPILAYER;

SEMICONDUCTOR QUANTUM WELLS;

EID: 48049097036     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.05.056     Document Type: Article

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