Performance and reliability of Au and Pt single-layer metal nanocrystal flash memory under nand (FN/FN) operation

IEEE Transactions on Electron Devices

Volumn 56, Issue 9, 2009, Pages 2065-2072

  Singh, Pawan K ^a   Hofmann, Ralf ^b   Singh, Kaushal K ^b   Krishna, Nety ^b   Mahapatra, Souvik ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b APPLIED MATERIALS INC   (United States)

Author keywords

Cycling endurance; Flash memory; Memory window; Metal nanocrystals (NCs); Reliability failure; Retention; Transmission electron microscopy (TEM) electron diffraction (EDX)

Indexed keywords

CYCLING ENDURANCE; MEMORY WINDOW; METAL NANOCRYSTALS (NCS); RELIABILITY FAILURE; RETENTION;

DIELECTRIC MATERIALS; DURABILITY; ELECTRON DIFFRACTION; ELECTRON MICROSCOPES; ELECTRONS; GATE DIELECTRICS; GATES (TRANSISTOR); GOLD; LIGHT TRANSMISSION; MOS CAPACITORS; NANOCRYSTALS; PLATINUM; RELIABILITY; TRANSMISSION ELECTRON MICROSCOPY; WINDOWS;

FLASH MEMORY;

EID: 69549110920     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2026324     Document Type: Article

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