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Volumn , Issue , 2008, Pages

Au nanocrystal flash memory reliability and failure analysis

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC NETWORK ANALYSIS; ELECTRONICS INDUSTRY; FAILURE ANALYSIS; FLASH MEMORY; INTEGRATED CIRCUITS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURES; NANOTECHNOLOGY; PLATINUM; QUALITY ASSURANCE; RELIABILITY ANALYSIS; SAFETY FACTOR; SEMICONDUCTOR STORAGE; TECHNICAL PRESENTATIONS;

EID: 51949105743     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2008.4588190     Document Type: Conference Paper
Times cited : (6)

References (12)
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    • Kim, K.1
  • 2
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    • (2006) IEDM , pp. 54-55
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  • 3
    • 47249154755 scopus 로고    scopus 로고
    • Band Engineered Charge Trap Layer for highly Reliable MLC Flash Memory
    • Z. Huo et al, "Band Engineered Charge Trap Layer for highly Reliable MLC Flash Memory", VLSI Tech. Symposium 2007, pp 138-139
    • (2007) VLSI Tech. Symposium , pp. 138-139
    • Huo, Z.1
  • 5
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    • Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals
    • S. K. Samanta et al, "Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals", IEDM Tech Dig 2005, pp. 170-173
    • (2005) IEDM Tech Dig , pp. 170-173
    • Samanta, S.K.1
  • 6
    • 39749179836 scopus 로고    scopus 로고
    • Extensive Reliability Analysis of Tungsten Dot NC Devices Embedded in HfAlO High-k Dielectric under NAND (FN/FN) Operation
    • P. K. Singh, A Nainani, "Extensive Reliability Analysis of Tungsten Dot NC Devices Embedded in HfAlO High-k Dielectric under NAND (FN/FN) Operation", IPFA 2007, pp. 197-201
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    • Singh, P.K.1    Nainani, A.2
  • 7
    • 19944410470 scopus 로고    scopus 로고
    • Performance and Reliability Features of Advanced Nonvolatile Memories Based on Discrete Traps (Silicon Nanocrystals, SONOS)
    • B. De Salvo et al, "Performance and Reliability Features of Advanced Nonvolatile Memories Based on Discrete Traps (Silicon Nanocrystals, SONOS)", IEEE Trans. Device, Materials and Reliability, Vol. 4, No. 3, 2004. pp. 377 - 389
    • (2004) IEEE Trans. Device, Materials and Reliability , vol.4 , Issue.3 , pp. 377-389
    • De Salvo, B.1
  • 8
    • 8144221080 scopus 로고    scopus 로고
    • Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High-k Tunneling and Control Oxides: Device Fabrication and Electrical Performance
    • Jing Hao Chen et al, "Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High-k Tunneling and Control Oxides: Device Fabrication and Electrical Performance", IEEE Trans. Electron Devices, Vol. 51, No. 11, 2004. pp. 1840 - 1848
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    • Hao Chen, J.1
  • 10
    • 34247536761 scopus 로고    scopus 로고
    • Fabrication and charging characteristics of MOS capacitor structure with metal nanocrystals embedded in gate oxide
    • W Guan et al, "Fabrication and charging characteristics of MOS capacitor structure with metal nanocrystals embedded in gate oxide", J. Phys. D: Appl. Phys. 40 (2007) 2754-2758
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  • 11
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    • Metal nanocrystal/nitride heterogeneous-stack floating gate memory
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  • 12
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    • Development of A 3D Simulator for Metal Nanocrystal (NC) Flash Memories under NAND Operation
    • A. Nainani et. al., "Development of A 3D Simulator for Metal Nanocrystal (NC) Flash Memories under NAND Operation", IEDM Tech. Dig. 2007
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.