Optical characteristics of Si/SiO2 multilayers prepared by magnetron sputtering

Microelectronic Engineering

Volumn 86, Issue 11, 2009, Pages 2342-2346

  Xiao, Hong ^a   Huang, Shihua ^a   Zheng, Jufang ^a   Xie, Guanqun ^a   Xie, Yunlong ^a  

^a ZHEJIANG NORMAL UNIVERSITY   (China)

Author keywords

Magnetron sputtering; Photoluminescence; Raman spectra; Si SiO2

Indexed keywords

ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; BLUE SHIFT; CRYSTALLINE STRUCTURE; ELECTRON HOLE PAIRS; GRAIN SIZE; INTERFACE STATE; LUMINESCENCE EFFICIENCIES; OPTICAL CHARACTERISTICS; POTENTIAL BARRIERS; QUANTUM WELL; RAMAN SPECTRA; SI DANGLING BONDS; SI/SIO2; VISIBLE LUMINESCENCE; XRD;

ANNEALING; DANGLING BONDS; GRAIN SIZE AND SHAPE; LIGHT EMISSION; LIGHT TRANSMISSION; MAGNETRON SPUTTERING; MAGNETRONS; PHOTOLUMINESCENCE; QUANTUM CONFINEMENT; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SILICON; SILICON COMPOUNDS;

MULTILAYERS;

EID: 69549091710     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.04.014     Document Type: Article

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