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Solid State Communications

Volumn 122, Issue 5, 2002, Pages 271-275

Optical absorption in an amorphous silicon superlattice grown by molecular beam epitaxy

(6) Lockwood, D J a Baribeau, J M a Noel M a Zwinkels, J C a Fogal, B J b O'Leary, S K b

a NATIONAL RESEARCH COUNCIL CANADA (Canada)

b UNIVERSITY OF REGINA (Canada)

Author keywords

A. Disordered system; A. Nanostructures; A. Semiconductors; A. Thin films; D. Optical properties

Indexed keywords

AMORPHOUS SILICON; CRYSTAL IMPURITIES; FILM PREPARATION; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SAPPHIRE; THIN FILMS; ULTRAHIGH VACUUM;

DISORDERED SYSTEMS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0036568934 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1098(02)00122-9 Document Type: Article

Times cited : (21)

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