Application of the Meyer-Neldel rule to the subthreshold characteristics of amorphous InGaZnO4 thin-film transistors

Japanese Journal of Applied Physics

Volumn 48, Issue 7 PART 1, 2009, Pages

  Takechi, Kazushige ^a   Nakata, Mitsuru ^a   Eguchi, Toshimasa ^a   Yamaguchi, Hirotaka ^b   Kaneko, Setsuo ^b  

^a Technology Research Association for Advanced Display Materials TRADIM   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; AMORPHOUS SI; EXPERIMENTAL DATA; EXPONENTIAL TAIL; MEYER-NELDEL RULES; ORDER OF MAGNITUDE; STATE DISTRIBUTIONS; SUBTHRESHOLD CHARACTERISTICS; TEMPERATURE DEPENDENT;

SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS;

AMORPHOUS SILICON;

EID: 69549134109     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.078001     Document Type: Article

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