Back-channel-oxidized a-Si:H thin-film transistors

Journal of Applied Physics

Volumn 84, Issue 7, 1998, Pages 3993-3999

  Takechi, Kazushige ^a   Hirano, Naoto ^a   Hayama, Hiroshi ^a   Kaneko, Setsuo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042497448     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368579     Document Type: Article

References (17)

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