Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure

Synthetic Metals

Volumn 159, Issue 17-18, 2009, Pages 1880-1884

  Kavasoglu, Nese ^a   Tozlu, Cem ^a   Pakma, Osman ^a   Kavasoglu, A Sertap ^a   Ozden, Sadan ^a   Metin, Bengul ^a   Birgi, Ozcan ^a   Oktik, Sener ^a  

^a MUGLA SITKI KOCMAN UNIVERSITY   (Turkey)

Author keywords

DC and AC characterization; Ideality factor; Interface states; Poly(4 vinyl phenol)

Indexed keywords

ACCEPTOR CONCENTRATIONS; C-V CHARACTERISTIC; C-V MEASUREMENT; CURRENT VOLTAGE; DC AND AC CHARACTERIZATION; FREQUENCY DISPERSION; FREQUENCY-DEPENDENT CAPACITANCE; IDEALITY FACTOR; IDEALITY FACTORS; INSULATOR LAYER; INTERFACE STATE; INTERFACE STATE DENSITY; INTERFACE STATES; LOW FREQUENCY; POLY(4-VINYL PHENOL); ROOM TEMPERATURE; SERIES RESISTANCES; SI SUBSTRATES; SPACE CHARGE REGIONS; TIO;

ELECTRIC POTENTIAL; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON NITRIDE;

PHENOLS;

EID: 69449097072     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2009.06.015     Document Type: Article

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