Organic light-emitting diodes based on new n-doped electron transport layer

Synthetic Metals

Volumn 158, Issue 21-24, 2008, Pages 810-814

  Ma, J W ^a   Xu, Wei ^a   Jiang, X Y ^a   Zhang, Z L ^a,b  

^a SHANGHAI UNIVERSITY   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Carrier transport; Conductivity; Doping concentration; Organic light emitting diodes

Indexed keywords

CARRIER CONCENTRATION; CIVIL AVIATION; CURRENT DENSITY; DIODES; DOPING (ADDITIVES); ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; HOLE CONCENTRATION; LIGHT EMISSION; LIGHT EMITTING DIODES; LUMINESCENT DEVICES;

CARRIER TRANSPORT LAYERS; CHARGE BALANCES; CONDUCTIVITY; CURRENT EFFICIENCIES; DOPING CONCENTRATION; ELECTRON TRANSPORTS; EMISSION ZONES; HOLE TRANSPORTS; N-DOPED; ORGANIC LIGHT-EMITTING DIODES; PHENANTHROLINE; POWER EFFICIENCIES; TRANSPORT LAYERS; TRIPHENYL AMINES;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 57649228487     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2008.05.009     Document Type: Article

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