Etching characteristics of manganese-doped zinc sulfide film using Cl 2/CF4 inductively coupled plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 5 A, 2004, Pages 2716-2720

  Yun, Sun Jin ^a   Kwon, Kwang Ho ^b   Lee, Yong Eui ^a   Kim, Chang Il ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Hanseo University   (South Korea)

^c Chung Ang University   (South Korea)

Author keywords

CF4; Cl2; Etch; ICP; Manganese; Zinc sulfide

Indexed keywords

CHEMICAL BONDS; CHLORINE; DOPING (ADDITIVES); ETCHING; INDUCTIVELY COUPLED PLASMA; MANGANESE; SURFACE REACTIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

CF4; ETCH RATE; GAS MIXTURES;

ZINC SULFIDE;

EID: 3142681671     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2716     Document Type: Article

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