Body thickness dependence of impact ionization in a multiple-gate FinFET

IEEE Electron Device Letters

Volumn 28, Issue 7, 2007, Pages 625-627

  Han, Jin Woo ^a   Lee, Jiye ^b   Park, Donggun ^c   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Department of Electrical Engineering and Computer Science   (United States)

^c SAMSUNG Electronics   (South Korea)

Author keywords

Characteristic length; Fin field effect transistor (FinFET); Impact ionization; Multiple gate MOSFET; Nonlocal effect; Substrate current; Trigate

Indexed keywords

FIN FIELD-EFFECT TRANSISTOR; MULTIPLE-GATE MOSFET;

ELECTRIC CURRENTS; GATES (TRANSISTOR); IMPACT IONIZATION; SUBSTRATES; THICKNESS MEASUREMENT;

MOSFET DEVICES;

EID: 34447269711     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.898284     Document Type: Article

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