High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2105-2108

  Cheng, W ^a   Teramoto, A ^a   Kuroda, R ^a   Hirayama, M ^a   Ohmi, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Accumulation mode; Multi gate MOSFETs; NBTI; Silicon on insulator

Indexed keywords

DEGRADATION; MOSFET DEVICES; OXIDATION; SILICON ON INSULATOR TECHNOLOGY;

ACCUMULATION MODES; MULTI-GATE MOSFET;

CMOS INTEGRATED CIRCUITS;

EID: 34248657305     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.124     Document Type: Article

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