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Journal of the Korean Physical Society

Volumn 55, Issue 1, 2009, Pages 263-266

Nanoscale two-bit NAND silicon-oxide-nitride-oxide-silicon flash memories with a pair of double gate FinFET structures

(5) Oh, Se Woong a Park, Sang Su a You, Joo Hyung a Kim, Tae Whan a Kim, Hyun Woo a

a Hanyang University (South Korea)

Author keywords

2 bit cell; Charge density; Double gate FinFET; FinFET; NAND flash memory; SONOS

Indexed keywords

EID: 69249179521 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: 10.3938/jkps.55.263 Document Type: Article

Times cited : (4)

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