Characterization of carriers in GaSbInAs superlattice grown on conductive GaSb substrate

Applied Physics Letters

Volumn 92, Issue 1, 2008, Pages

  Chandrasekhar Rao, T V ^a   Antoszewski, J ^a   Faraone, L ^a   Rodriguez, J B ^b   Plis, E ^b   Krishna, S ^b  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^b MSC01 1070   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH; ENERGY GAP; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTRUM ANALYSIS; SUPERLATTICES;

CONDUCTIVE GASB SUBSTRATE; ELECTRICAL TRANSPORT; GASBINAS SUPERLATTICE; MOBILITY SPECTRUM ANALYSIS;

CHARGE CARRIERS;

EID: 38049029597     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2831666     Document Type: Article

References (16)

1. A. Rogalski and P. Martyniuk, Infrared Phys. Technol. IPTEEY 1350-4495 10.1016/j.infrared.2005.01.003 48, 39 (2006).
2. H. Mohseni, E. Michel, J. Sandoen, M. Razeghi, W. Mitchel, and G. Brown, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.119906 71, 1403 (1997).
3. R. Rehm, J. Schmitz, J. Fleißner, M. Walther, J. Ziegler, W. Cabanski, and R. Breiter, Phys. Status Solidi C ZZZZZZ 1610-1634 3, 435 (2006).
4. Y. Wei, A. Hood, H. Yau, A. Gin, M. Razeghi, M. Z. Tidrow, and V. Nathan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1947908 86, 233106 (2005).
5. L. Bürkle, F. Fuchs, J. Schmitz, and W. Pletschen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1310167 77, 1659 (2000).
6. A. Hood, D. Hoffman, Y. Wei, F. Fuchs, and M. Razeghi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2172399 88, 052112 (2006).
7. I. Vurgaftman, J. R. Meyer, C. A. Hoffman, D. Redfern, J. Antoszewski, L. Faraone, and J. R. Lindemuth, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.368741 84, 4966 (1998).
8. J. Antoszewski and L. Faraone, Opto-Electron. Rev. OELREM 1230-3402 12, 347 (2004).
9. E. Plis, S. Annamalai, K. T. Posani, S. Krishna, R. A. Rupani, and S. Ghosh, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2214222 100, 014510 (2006).
10. H. J. Haugan, G. J. Brown, F. Szmulowicz, L. Grazulis, W. C. Mitchel, S. Elhamri, and W. D. Mitchell, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2005.01.006 278, 198 (2005).
11. F. Szmulowicz, H. Haugan, and G. J. Brown, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.155321 69, 155321 (2004).
12. A. P. Ongstad, R. Kaspi, C. E. Moeller, M. L. Tilton, D. M. Gianardi, J. R. Chavez, and G. C. Dente, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1337918 89, 2185 (2001).
13. R. D. Wiersma, J. A. H. Stotz, O. J. Pitts, C. X. Wang, M. L. W. Thewalt, and S. P. Watkins, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.67.165202 67, 165202 (2003).
14. P. S. Dutta, V. Prasad, H. L. Bhat, and V. Kumar, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.363135 80, 2847 (1996).
15. J. H. Roslund, K. Saito, K. Suzuki, H. Yamaguchi, and Y. Hirayama, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.39.2448 39, 2448 (2000).
16. http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaSb/bandstr.html and references therein. The site provides activation energies of several shallow donors and acceptors of GaSb and links to original references.