InAs/GaInSb superlattices as a promising material system for third generation infrared detectors

Infrared Physics and Technology

Volumn 48, Issue 1, 2006, Pages 39-52

  Rogalski, A ^a   Martyniuk, P ^a  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Focal plane arrays; InAs GaInSb superlattices; NEDT; Photodiodes; R0A product; Third generation infrared detectors

Indexed keywords

INFRARED DETECTORS; PHOTODIODES; PHOTONS; SCANNING; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

FOCAL PLANE ARRAYS; INAS/GAINSB SUPERLATTICES; NEDT; R0A PRODUCT; THIRD GENERATION INFRARED DETECTORS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33644941037     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2005.01.003     Document Type: Article

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