Growth optimization for low residual carriers in undoped midinfrared InAs/GaSb superlattices

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Haugan, H J ^a   Elhamri, S ^a,b   Brown, G J ^a   Mitchel, W C ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF DAYTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITIES; CUTOFF WAVELENGTHS; DOPING CONCENTRATIONS; GROWTH OPTIMIZATIONS; GROWTH PARAMETERS; HALL MEASUREMENTS; IN-SITU; INAS/GASB SUPERLATTICES; INTERFACE CONTROLS; INTERFACIAL QUALITIES; MIDINFRARED; OPERATING TEMPERATURES; PHOTOCONDUCTIVE DEVICES; POSTANNEALING; RESIDUAL CARRIERS; WITH OR WITHOUT;

ANNEALING; CARRIER CONCENTRATION; CIVIL AVIATION; CONCENTRATION (PROCESS); ELECTRIC CONDUCTIVITY; PHOTOCONDUCTIVITY;

CARRIER MOBILITY;

EID: 54049146296     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2993748     Document Type: Article

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