Influence of SiO2 matrix on electronic and optical properties of Si nanocrystals

Nanotechnology

Volumn 20, Issue 13, 2009, Pages

  Seino, K ^a   Bechstedt, F ^a   Kroll, P ^b  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB-INITIO; ABSORPTION EDGES; DIAMETER VARIATIONS; ELECTRONIC CONFINEMENTS; EXPERIMENTAL DATUM; MATRIXES; OPTICAL RESPONSE; PHOTON ENERGIES; SI NANOCRYSTALS;

AMORPHOUS SILICON; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; OPTICAL PROPERTIES; SILICON; SILICON COMPOUNDS;

NANOCRYSTALS;

NANOCRYSTAL; SILICON DIOXIDE;

AB INITIO CALCULATION; ABSORPTION; ARTICLE; DENSITY FUNCTIONAL THEORY; ELECTRONICS; HYDROGENATION; PARTICLE SIZE; PRIORITY JOURNAL;

EID: 65549154228     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/13/135702     Document Type: Article

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