Excitation and de-excitation properties of silicon quantum dots under electrical pumping

Applied Physics Letters

Volumn 81, Issue 10, 2002, Pages 1866-1868

  Irrera, A ^a   Pacifici, D ^a   Miritello, M ^a   Franzo G ^a   Priolo, F ^a   Iacona, F ^b   Sanfilippo, D ^c   Di Stefano, G ^c   Fallica, P G ^c  

^a UNIVERSITY OF CATANIA   (Italy)

^b CNR IMM   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DE-EXCITATIONS; ELECTRICAL PUMPING; ELECTROLUMINESCENCE PROPERTIES; EXCITATION CROSS SECTION; METAL OXIDE SEMICONDUCTOR; NONRADIATIVE DECAY PROCESS; ORDERS OF MAGNITUDE; SI NANOCRYSTAL; SI QUANTUM DOT; SILICON QUANTUM DOTS; TEMPERATURE RANGE; TIME EVOLUTIONS; TIME-RESOLVED;

ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; NANOCRYSTALS; PUMPS; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS;

OPTICAL PUMPING;

EID: 77049088804     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1505117     Document Type: Article

References (17)

1. S. S. Iyer and Y.-H. Xie, Science 260, 40 (1993). sciSCIEAS0036-8075
2. T. Shimizu-Iwayama, K. Fujita, S. Nakao, K. Saitoh, T. Fujita, and N. Itoh, J. Appl. Phys. 75, 7779 (1994). japJAPIAU0021-8979
3. F. Priolo, G. Franzò, D. Pacifici, V. Vinciguerra, F. Iacona, and A. Irrera, J. Appl. Phys. 89, 264 (2001). japJAPIAU0021-8979
4. K. S. Min, K. V. Shcheglov, C. M. Yang, H. A. Atwater, M. L. Brongersma, and A. Polman, Appl. Phys. Lett. 69, 2033 (1996). aplAPPLAB0003-6951
5. F. Iacona, G. Franzò, and C. Spinella, J. Appl. Phys. 87, 1295 (2000). japJAPIAU0021-8979
6. S. Hayashi, T. Nagareda, Y. Kanzawa, and K. Yamamoto, Jpn. J. Appl. Phys., Part 1 32, 3840 (1993). jjbJAPNDE0021-4922
7. E. Werwa, A. A. Seraphin, L. A. Chin, C. Zhou, and K. D. Kolenbrander, Appl. Phys. Lett. 64, 1821 (1994). aplAPPLAB0003-6951
8. G. Franzò, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, Appl. Phys. A: Mater. Sci. Process. 74, 1 (2002). mfcAPAMFC0947-8396
9. P. Photopoulos and A. G. Nassiopoulou, Appl. Phys. Lett. 77, 1816 (2000). aplAPPLAB0003-6951
10. V. R. Nikitenko, Y.-H. Tak, and H. Bässler, J. Appl. Phys. 84, 2334 (1998). japJAPIAU0021-8979
11. V. R. Nikitenko, V. I. Arkhipov, Y.-H. Tak, J. Pommerehne, H. Bässler, and H.-H. Hornold, J. Appl. Phys. 81, 7514 (1997). japJAPIAU0021-8979
12. J. Linnros, N. Lalic, A. Galeckas, and V. Grivckas, J. Appl. Phys. 86, 6128 (1999). japJAPIAU0021-8979
13. P. D. J. Calcott, K. J. Nash, L. T. Canham, M. J. Kane, and D. Brumhead, J. Phys.: Condens. Matter 5, L91 (1993). jczJCOMEL0953-8984
14. K. S. Zhuravlev and A. Yu. Kobitski, Semiconductors 34, 1203 (2000). semSMICES1063-7826
15. A. Yu. Kobitski, K. S. Zhuravlev, H. P. Wagner, and D. R. T. Zahn, Phys. Rev. B 63, 115423 (2001). prbPRBMDO0163-1829
16. V. Vinciguerra, G. Franzò, F. Priolo, F. Iacona, and C. Spinella, J. Appl. Phys. 87, 8165 (2000). japJAPIAU0021-8979
17. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. 82, 197 (1999). prlPRLTAO0031-9007