Influence of a high electric field on the photoluminescence from silicon nanocrystals in SiO2

Materials Science and Engineering: B

Volumn 101, Issue 1-3, 2003, Pages 324-328

  Ioannou Sougleridis, V ^a   Kamenev, B ^a,b   Kouvatsos, D N ^a   Nassiopoulou, A G ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

Photoluminescence; Quantum confined Stark effect; Silicon nanocrystals

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELD EFFECTS; LIGHT EMISSION; PHOTODEGRADATION; PHOTOLUMINESCENCE; RADIATION EFFECTS; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

QUANTUM-CONFINED STARK EFFECT; SILICON NANOCRYSTALS;

NANOSTRUCTURED MATERIALS;

EID: 1642382726     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00733-X     Document Type: Conference Paper

References (11)

1. J. Valenta, R. Juhasz, J. Linnros, J. Luminescence (2002) in press.
2. Tiwari S., Rama F., Hanafi H., Hartstein A., Crabbe E.F., Chan K. Appl. Phys. Lett. 68:1996;1377.
3. Tiwari S., Rama F., Chan K., Shi L., Hanafi H. Appl. Phys. Lett. 69:1996;1232.
4. Lockwood D.J., Lu Z.H., Baribeau J.-M. Phys. Rev. Lett. 76:1996;539.
5. Tsybeskov L., Hirschman K.D., Duttagupta S.P., Zacharias M., Fauchet P.M., McCaffrey J.P., Lockwood D.J. Appl. Phys. Lett. 72:1998;43.
6. Vinciguerra V., Franzo G., Priolo F., Iacona F., Spinella C. J. Appl. Phys. 87:2000;8166.
7. Photopoulos P., Nassiopoulou A.G., Kouvatsos D.N., Travlos A. Appl. Phys. Lett. 76:2000;3588.
8. Photopoulos P., Nassiopoulou A.G. Appl. Phys. Lett. 77:2000;1816.
9. Quisse T., Nassiopoulou A.G. Europhys. Lett. 51:2000;168.
10. Delerue C., Lannoo M., Allen G., Martin E., Michalcescu I., Vial J.C., Romestain R., Muller F., Bsiecy A. Phys. Rev. Lett. 75:1995;2288.
11. Michalcescu I., Vial J.C., Bsiecy A., Muller F., Romestain R., Martin E., Delerue C., Lannoo M., Allen G. Phys. Rev. B. 51:1995;17605.