Fabrication of suspended silicon nanowire arrays

Small

Volumn 4, Issue 5, 2008, Pages 642-648

  Lee, Kook Nyung ^a   Jung, Suk Won ^a   Shin, Kyu Sik ^a   Kim, Won Hyo ^a   Lee, Min Ho ^a   Seong, Woo Kyeong ^a  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

Author keywords

Arrays; Patterning; Reactive ion etching; Semiconductor nanowires; Thermal oxidation

Indexed keywords

COMPUTER NETWORKS; ELECTROMECHANICAL DEVICES; FIELD EFFECT TRANSISTORS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; SILICON; SILICON WAFERS;

(MIN ,MAX ,+) FUNCTIONS; (PL) PROPERTIES; NANOWIRE (NW) DEVICES; SILICON NANOWIRE ARRAY (SINW); SILICON NANOWIRES (SINWS); SILICON-NANOWIRE; SINGLE CRYSTAL SILICON (SCS); WAFER LEVEL PRODUCTION;

ELECTRIC WIRE;

NANOTUBE; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; INSTRUMENTATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SILICON; SURFACE PROPERTIES; TRANSISTORS;

EID: 44949151547     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200700517     Document Type: Article

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